Title :
SiC power devices for HEV/EV and a novel SiC vertical JFET
Author :
Ishikawa, Tsuyoshi ; Tanaka, Yasunori ; Yatsuo, Tsutomu ; Yano, Koji
Author_Institution :
Toyota Central R&D Labs., Inc., Nagakute, Japan
Abstract :
We propose a novel SiC VJFET with low feedback capacitance Crss. A key feature of the proposed VJFET is the p+ screen grid inserted between gate and drain electrode. The screen grid effectively reduces the Crss by about 80% compared to a conventional VJFET. The lowest total power dissipation among existing SiC power devices can be achieved by the low Crss. This new VJFET can be a promising candidate for a high-speed and low-loss SiC power device.
Keywords :
hybrid electric vehicles; junction gate field effect transistors; power transistors; silicon compounds; HEV-EV; SiC; VJFET; drain electrode; gate electrode; high-speed power device; hybrid electric vehicles; low feedback capacitance; low-loss power device; p+ screen grid; vertical JFET; Capacitance; Electrodes; Logic gates; MOSFET; Performance evaluation; Silicon carbide; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7046964
