Title :
High voltage silicon based devices for energy efficient power distribution and consumption
Author_Institution :
ABB Switzerland Ltd., Lenzburg, Switzerland
Abstract :
This paper gives an overview of future requirements and recent progress of silicon based semiconductor devices for very high power applications. The first part provides an outline of future trends in the areas of power transmission and power consumption and the resulting requirements on device design and performance. The second part elaborates on the recent advances of bipolar power devices and the corresponding packaging technologies used in these high power applications.
Keywords :
distribution networks; elemental semiconductors; energy conservation; power consumption; power semiconductor devices; semiconductor device packaging; silicon; transmission networks; Si; bipolar power device; energy efficient power consumption; energy efficient power distribution; high voltage silicon based semiconductor device; packaging technology; power transmission; HVDC transmission; Insulated gate bipolar transistors; Logic gates; Reliability; Silicon; Thyristors; Topology;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7046966
