Title :
16 nm FinFET High-k/Metal-gate 256-kbit 6T SRAM macros with wordline overdriven assist
Author :
Yabuuchi, Makoto ; Morimoto, Masao ; Tsukamoto, Yasumasa ; Tanaka, Shinji ; Tanaka, Koji ; Tanaka, Miki ; Nii, Koji
Author_Institution :
Renesas Electron. Corp., Tokyo, Japan
Abstract :
We demonstrate 16 nm FinFET High-k/Metal-gate SRAM macros with a wordline (WL) overdriven read/write-assist circuit. Test-chip measurements confirm improved minimum operating voltage (Vmin), standby leakage current, and access time compared to planar bulk CMOS. The proposed assist circuit improves Vmin by 50 mV and improves read-access-time by more than 1.5 times in 256-kbit SRAM macros. Read current (Iread) dependence against the fin diffusion length was observed. An extra design guard-band is needed to provide a reliable operation margin.
Keywords :
MOSFET; SRAM chips; high-k dielectric thin films; leakage currents; 6T SRAM macros; FinFET; high-k metal gate; leakage current; read current dependence; read write assist circuit; size 16 nm; storage capacity 256 Kbit; test chip measurements; wordline overdriven assist; CMOS integrated circuits; CMOS technology; FinFETs; High K dielectric materials; Layout; Random access memory;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7046972
