A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives

Author

Chevalier, P. ; Avenier, G. ; Ribes, G. ; Montagne, A. ; Canderle, E. ; Celi, D. ; Derrier, N. ; Deglise, C. ; Durand, C. ; Quemerais, T. ; Buczko, M. ; Gloria, D. ; Robin, O. ; Petitdidier, S. ; Campidelli, Y. ; Abbate, F. ; Gros-Jean, M. ; Berthier, L.

Author_Institution

STMicroelectron. & CEA-LETI, Crolles, France

fYear

2014

Abstract

This paper presents the first 55 nm SiGe BiCMOS technology developed on a 300 mm wafer line in STMicroelectronics. The technology features Low Power (LP) and General Purpose (GP) CMOS devices and 0.45 μm² 6T-SRAM bit cell. High Speed (HS) HBT exhibits 320 GHz f_T and 370 GHz f_MAX associated with a CML ring oscillator gate delay τ_D of 2.34 ps. Transmission lines, capacitors, high-Q varactors and inductors dedicated to millimeter-wave applications are also available.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; SRAM chips; current-mode logic; heterojunction bipolar transistors; millimetre wave integrated circuits; 6T-SRAM bit cell; BiCMOS technology; CML ring oscillator gate delay; STMicroelectronics; SiGe; capacitors; general purpose CMOS device; high speed HBT; high-Q millimeter-wave passives; high-Q varactors; inductors; low power CMOS device; size 0.45 mum; size 300 mm; size 55 nm; time 2.34 ps; transmission lines; triple gate oxide; BiCMOS integrated circuits; CMOS integrated circuits; Heterojunction bipolar transistors; Logic gates; Millimeter wave technology; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7046978

Filename

7046978