MOS Capacitor Deep Trench Isolation for CMOS image sensors

Author

Ahmed, N. ; Roy, F. ; Lu, G.-N. ; Mamdy, B. ; Carrere, J.-P. ; Tournier, A. ; Virollet, N. ; Perrot, C. ; Rivoire, M. ; Seignard, A. ; Pellissier-Tanon, D. ; Leverd, F. ; Orlando, B.

Author_Institution

STMicroelectron., Crolles, France

fYear

2014

Abstract

This paper proposes the integration of MOS Capacitor Deep Trench Isolation (CDTI) as a solution to boost image sensors´ pixels performances. We have investigated CDTI and compared it to oxide-filled Deep Trench Isolation (DTI) configurations, on silicon samples, with a fabrication based on TCAD simulations. The experiment measurements evaluated on CDTI without Sidewall Implantation (SWI) exhibit very low dark current (~1aA at 60°C for a 1.4μm pixel), high full-well capacity (~12000e-), and it shows quantum efficiency improvement compared to DTI configuration. Pixels with optimized CDTI gate oxide thickness have demonstrated comparable angular response to oxide-filled DTI counterparts.

Keywords

CMOS image sensors; MOS capacitors; elemental semiconductors; isolation technology; silicon; technology CAD (electronics); CDTI gate oxide thickness; CMOS image sensors; MOS capacitor deep trench isolation; Si; TCAD simulations; silicon samples; CMOS image sensors; Crosstalk; Dark current; Diffusion tensor imaging; Logic gates; MOS capacitors; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7046979

Filename

7046979