Title :
9.74-THz electronic Far-Infrared detection using Schottky barrier diodes in CMOS
Author :
Ahmad, Zeshan ; Lisauskas, Alvydas ; Roskos, Hartmut G. ; Kenneth, K.O.
Author_Institution :
Texas Analog Center of Excellence, Univ. of Texas at Dallas, Richardson, TX, USA
Abstract :
9.74-THz fundamental electronic detection of Far-Infrared (FIR) radiation is demonstrated. The detection along with that at 4.92THz was realized using Schottky-barrier diode detection structures formed without any process modifications in CMOS. Peak optical responsivity (Rv) of 383 and ~14V/W at 4.92 and 9.74THz have been measured. The Rv at 9.74THz is 14X of that for the previously reported highest frequency electronic detection. The shot noise limited NEP at 4.92 and 9.74THz is ~0.43 and ~2nW/√Hz, respectively.
Keywords :
CMOS integrated circuits; Schottky diodes; infrared detectors; CMOS integrated circuit; Schottky barrier diode detection; electronic far infrared detection; frequency 4.92 THz; frequency 9.74 THz; Antennas; CMOS integrated circuits; Detectors; Finite impulse response filters; Measurement by laser beam; Noise; Schottky diodes;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7046982
