DocumentCode :
3565045
Title :
Experimental demonstration of a stacked SOI multiband charged-coupled device
Author :
Chu-En Chang ; Segal, Julie D. ; Roodman, Aaron J. ; Kenney, Christopher J. ; Howe, Roger T.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
fYear :
2014
Abstract :
The multiband charge-coupled device (CCD) is a polychromatic image sensor fabricated on semiconductor-on-insulator substrates with multiple device layers. It can achieve a multifold improvement in efficiency compared to a conventional CCD, because photons are collected and resolved in the substrate without external optics. We present the first experimental demonstration of multiband light absorption and charge extraction for a single-pixel device. The ratio of the active layers´ responsivities changes with wavelength, indicating that incident color information is captured in the multiple device layers.
Keywords :
charge-coupled devices; image sensors; light absorption; silicon-on-insulator; CCD; active layer responsivities; charge extraction; incident color information; multiband light absorption; multiple device layers; polychromatic image sensor; semiconductor-on-insulator substrates; single-pixel device; stacked SOI multiband charged-coupled device; Charge coupled devices; Image color analysis; Light emitting diodes; Optical crosstalk; Optical device fabrication; Optical filters; Optical sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
Type :
conf
DOI :
10.1109/IEDM.2014.7046983
Filename :
7046983
Link To Document :
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