Title :
A solid state thin film incandescent light emitting device
Author_Institution :
Thin Film Nano & Microelectron. Res. Lab., Texas A&M Univ., College Station, TX, USA
Abstract :
A new type of solid state thin film white light emitting device has been studied. Light is emitted due to thermal excitation of the nano size conductive paths formed after the dielectric breakdown of the amorphous metal oxide thin film deposited on a silicon wafer. The mechanism of light emission, optical characteristics, reliability, driving methods, and efficiency are discussed. The complete device is made of the IC compatible materials and process.
Keywords :
electric breakdown; elemental semiconductors; light emitting devices; semiconductor device reliability; silicon; thin film devices; Si; amorphous metal oxide; dielectric breakdown; driving methods; incandescent light emitting device; light emission; nanosize conductive paths; optical characteristics; reliability methods; silicon wafer; solid state thin film device; thermal excitation; thin film deposition; white light emitting device; Dielectric breakdown; Dielectrics; Filament lamps; Films; Light emitting diodes; Metals; Solids;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7046985
