Title :
Contact resistance reduction using Fermi level de-pinning layer for MoS2 FETs
Author :
Woojin Park ; Yonghun Kim ; Sang Kyung Lee ; Ukjin Jung ; Jin Ho Yang ; Chunhum Cho ; Yun Ji Kim ; Sung Kwan Lim ; In Seol Hwang ; Han-Bo-Ram Lee ; Byoung Hun Lee
Author_Institution :
School of Materials Science and Engineering, Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
Achieving a low contact resistance for 2D materials is a critical challenge for device applications. In this work, the contact resistance of MoS2 FETs has been drastically reduced by five times from the reference data using an optimized TiO2 Fermi level de-pinning layer which reduced the effective Schottky barrier height to 0.1 eV. As a result, a very low contact resistance ~5.4 kΩ·μm was achieved without any doping technique.
Keywords :
Fermi level; Schottky barriers; contact resistance; field effect transistors; molybdenum compounds; titanium compounds; 2D materials; MoS2 FET; MoS2; Schottky barrier height; TiO2; contact resistance reduction; electron volt energy 0.1 eV; optimized TiO2 Fermi level depinning layer; Aluminum oxide; Contact resistance; Doping; Field effect transistors; Materials; Resistance;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7046986
