Title :
Broadband 10Gb/s graphene electro-absorption modulator on silicon for chip-level optical interconnects
Author :
Hu, Y.T. ; Pantouvaki, M. ; Brems, S. ; Asselberghs, I. ; Huyghebaert, C. ; Geisler, M. ; Alessandri, C. ; Baets, R. ; Absil, P. ; Van Thourhout, D. ; Van Campenhout, J.
Author_Institution :
Photonics Res. Group, Ghent Univ. - IMEC, Ghent, Belgium
Abstract :
We report the first silicon integrated graphene optical electro-absorption modulator capable of 10Gb/s modulation speed. We demonstrate low insertion loss and low drive voltage combined with broadband and athermal operation in a compact hybrid graphene-Si device, outperforming Si(Ge) optical modulators for future chip-level optical interconnect application.
Keywords :
electro-optical modulation; electroabsorption; graphene devices; integrated circuit interconnections; integrated optoelectronics; optical interconnections; silicon; SiGe; athermal operation; bit rate 10 Gbit/s; chip-level optical interconnects; graphene optical electro-absorption modulator; hybrid graphene-silicon device; low drive voltage; low insertion loss; modulation speed; Graphene; Optical fibers; Optical interconnections; Optical modulation; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7046991
