Title :
Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2
Author :
Pang-Shiuan Liu ; Chang-Hsiao Chen ; Wei-Ting Hsu ; Chih-Pin Lin ; Tzu-Ping Lin ; Li-Jen Chi ; Chao-Yuan Chang ; Shih-Chieh Wu ; Wen-Hao Chang ; Lain-Jong Li ; Tuo-Hung Hou
Author_Institution :
Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.
Keywords :
CVD coatings; phototransistors; tungsten compounds; CVD-synthesized large-area bilayer; P-channel transition metal dichalcogenide ultrathin-body phototransistor; WSe2; fast visible-light phototransistor; high-speed proximity interactive display; mass production; response time; Charge carrier processes; Hafnium compounds; Indium tin oxide; Lighting; Logic gates; Nickel; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7046992
