• DocumentCode
    3565054
  • Title

    Fast visible-light phototransistor using CVD-synthesized large-area bilayer WSe2

  • Author

    Pang-Shiuan Liu ; Chang-Hsiao Chen ; Wei-Ting Hsu ; Chih-Pin Lin ; Tzu-Ping Lin ; Li-Jen Chi ; Chao-Yuan Chang ; Shih-Chieh Wu ; Wen-Hao Chang ; Lain-Jong Li ; Tuo-Hung Hou

  • Author_Institution
    Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    2014
  • Abstract
    P-channel transition metal dichalcogenide ultrathin-body phototransistor (UTB-PT) with a response time as fast as 100 μs has been demonstrated for the first time using the CVD-synthesized large-area bilayer WSe2. Because of its excellent compatibility with mass production, the application of WSe2 UTB-PT for high-speed proximity interactive display has been proposed.
  • Keywords
    CVD coatings; phototransistors; tungsten compounds; CVD-synthesized large-area bilayer; P-channel transition metal dichalcogenide ultrathin-body phototransistor; WSe2; fast visible-light phototransistor; high-speed proximity interactive display; mass production; response time; Charge carrier processes; Hafnium compounds; Indium tin oxide; Lighting; Logic gates; Nickel; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7046992
  • Filename
    7046992
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565054