Controlling oxygen vacancies in doped oxide based CBRAM for improved memory performances

In this paper the concept hybrid CBRAM assisted by oxygen vacancies is presented for the 1<;sup>st<;/sup> time. Doping the resistive layer of oxide/Cu based CBRAM with <; dopant species and concentrations is proposed in order to improve the memory performances. By means of experimental characterizations, numerical model and atomistic calculations, we demonstrate that increasing the doping content ease the filament formation by facilitating the Cu injection in the resistive layer. The proper choice of the doping element and concentration allows to significantly reduce the forming voltage (up to a forming free behavior), or alternatively to increase the memory window of 3 decades, with no forming voltage increase and retention degradation (stable behavior at 200°C, 260°C soldering sustained).