Title :
Process integration of a 27nm, 16Gb Cu ReRAM
Author :
Zahurak, John ; Miyata, Koji ; Fischer, Mark ; Balakrishnan, Murali ; Chhajed, Sameer ; Wells, David ; Hong Li ; Torsi, Alessandro ; Lim, Jay ; Korber, Mark ; Nakazawa, Keiichi ; Mayuzumi, Satoru ; Honda, Motonari ; Sills, Scott ; Yasuda, Shuichiro ; Cald
Author_Institution :
Micron Technol. Inc., Boise, ID, USA
Abstract :
A 27nm 16Gb Cu based NV Re-RAM chip has been demonstrated. Novel process introduction to enable this technology include a Damascene Cell, Line-SAC Digit Lines filled with Cu, exhumed-silicided array contacts, raised epitaxial arrays, and high-drive buried access devices.
Keywords :
copper; epitaxial layers; random-access storage; Cu; damascene cell; epitaxial arrays; high-drive buried access devices; line-SAC digit lines; nonvolatile ReRAM chip; process integration; silicided array contacts; size 27 nm; storage capacity 16 Gbit; Arrays; Metals; Performance evaluation; Plugs; Random access memory; Silicides; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7046994
