• DocumentCode
    3565058
  • Title

    Point twin-bit RRAM in 3D interweaved cross-point array by Cu BEOL process

  • Author

    Yung-Wen Chin ; Shu-En Chen ; Min-Che Hsieh ; Tzong-Sheng Chang ; Chrong Jung Lin ; Ya-Chin King

  • Author_Institution
    Microelectron. Lab., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2014
  • Abstract
    A self-rectifying twin-bit RRAM in a novel 3D interweaved cross-point array has been proposed and demonstrated in 28nm CMOS BEOL process. With TaOx RRAMs on both sides of a single Via, the twin-bit RRAM cell is composed by Cu back-end layers only. Excellent selectivity by its asymmetric IV characteristic enables the twin-bit 1R cells to be efficiently stacked in 3D cross-point arrays.
  • Keywords
    CMOS integrated circuits; copper; resistive RAM; tantalum compounds; 3D interweaved cross-point array; CMOS BEOL process; Cu; Cu BEOL process; Cu back-end layers; TaOx; asymmetric IV characteristic; back-end-of-the-line; point twin-bit RRAM; self-rectifying twin-bit RRAM; size 28 nm; Arrays; CMOS integrated circuits; Logic gates; Metals; Microprocessors; Three-dimensional displays; BEOL; RRAM; self-rectifying;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7046996
  • Filename
    7046996
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565058