3D-stackable crossbar resistive memory based on Field Assisted Superlinear Threshold (FAST) selector

We report the integration of 3D-stackable 1S1R passive crossbar RRAM arrays utilizing a Field Assisted Superlinear Threshold (FAST) selector. The sneak path issue in crossbar memory integration has been solved using the highest reported selectivity of 10¹⁰. Excellent selector performance is presented such as extremely sharp switching slope of <; 5mV/dec., selectivity of 10¹⁰, sub-50ns operations, > 100M endurance and processing temperature less than 300°C. Measurements on the 4Mb 1S1R crossbar array show that the sneak current is suppressed below 0.1nA, while maintaining 10² memory on/off ratio and > 10⁶ selectivity during cycling, enabling high density memory applications.