Title :
High-drive current (>1MA/cm2) and highly nonlinear (>103) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance
Author :
Leqi Zhang ; Govoreanu, Bogdan ; Redolfi, Augusto ; Crotti, Davide ; Hody, Hubert ; Paraschiv, Vasile ; Cosemans, Stefan ; Adelmann, Christoph ; Witters, Thomas ; Clima, Sergiu ; Yang-Yin Chen ; Hendrickx, Paul ; Wouters, Dirk J. ; Groeseneken, Guido ; Ju
Author_Institution :
Dept. of Electr. Eng., KU Leuven, Leuven, Belgium
Abstract :
An optimized TiN/amorphous-Silicon/TiN (MSM) two-terminal bidirectional selector is proposed for high density RRAM arrays. The devices show superior performance with high drive current exceeding 1MA/cm2 and half-bias nonlinearity of 1500. Excellent reliability is fully demonstrated on 40nm-size crossbar structures, with statistical ability to withstand bipolar cycling of over 106 cycles at drive current conditions and thermal stability of device operation exceeding 3hours at 125°C. Furthermore, for the first time, we address the impact of selector variability in a 1S1R memory array, by including circuit simulations in a Monte Carlo loop and point out the importance of selector variability for the low resistive state and its implications on the read margin and power consumption.
Keywords :
Monte Carlo methods; amorphous semiconductors; power consumption; resistive RAM; silicon compounds; titanium compounds; 1S1R array performance; Monte Carlo; RRAM arrays; TiN; crossbar structures; power consumption; size 40 nm; temperature 125 C; thermal stability; time 3 h; two-terminal bidirectional selector; Annealing; Arrays; Performance evaluation; Stress; Switches; Tin; Tunneling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047000
