Coupled Monte Carlo simulation of transient electron-phonon transport in small FETs

Using a coupled Monte Carlo technique for solving both electron and phonon Boltzmann transport equations, the transient electrothermal simulation of nanoscale FETs is performed. It is shown that the time constants for the electron and phonon transport are different in order of magnitude, and the self-heating has little impact on digital circuit delay, while it would affect the bias temperature instability because of the long decay time of the created hot spot. The effectiveness of introducing the lightly doped drain structure is also discussed to reduce the hot spot temperature.