Title :
Assessment of hole mobility in strained InSb, GaSb and InGaSb based ultra-thin body pMOSFETs with different surface orientations
Author :
Pengying Chang ; Xiaoyan Liu ; Gang Du ; Xing Zhang
Author_Institution :
Sch. of Electron. & Comput. Eng., Peking Univ., Shenzhen, China
Abstract :
This work presents a systematic assessment of hole mobility in InSb, GaSb and InGaSb based ultra-thin body (UTB) double-gate pMOSFETs employing a self-consistent method based on 8×8 k · p Schrödinger and Poisson equations and including important scattering mechanisms. Physical models are calibrated against experiments. The effect of body thickness, surface/channel orientation, biaxial and uniaxial strain, and heterostructure design on hole mobility in III-V materials has been systematically investigated in order to help in providing useful guidelines.
Keywords :
III-V semiconductors; MOSFET; Poisson equation; Schrodinger equation; gallium compounds; hole mobility; indium compounds; semiconductor device models; GaSb; InGaSb; InSb; Poisson equation; Schrodinger equation; biaxial strain; body thickness; channel orientation; heterostructure design; hole mobility; scattering mechanism; self-consistent method; strained ultrathin body pMOSFET; surface orientation; uniaxial strain; Gallium arsenide; HEMTs; MODFETs; Scattering; Strain; Stress;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047007
