DocumentCode :
3565083
Title :
Integrated on-chip energy storage using porous-silicon electrochemical capacitors
Author :
Gardner, D.S. ; Holzwarth, C.W. ; Liu, Y. ; Clendenning, S.B. ; Jin, W. ; Moon, B.K. ; Pint, C. ; Chen, Z. ; Hannah, E. ; Chen, R. ; Wang, C.P. ; Chen, C. ; Makila, E. ; Gustafson, J.L.
Author_Institution :
Intel Labs., Intel Corp., Santa Clara, CA, USA
fYear :
2014
Abstract :
Integrated on-chip energy storage is increasingly important in the fields of internet of things, energy harvesting, and wearables with capacitors being ideal for devices requiring higher powers, low voltages, or many thousands of cycles. This work demonstrates electrochemical capacitors fabricated using porous Si nanostructures with very high surface-to-volume ratios and an electrolyte. Stability is achieved through ALD TiN or CVD carbon coatings. The use of Si processing methods creates the potential for on-chip energy storage.
Keywords :
atomic layer deposition; capacitors; carbon; chemical vapour deposition; electrochemistry; electrolytes; elemental semiconductors; energy storage; nanostructured materials; porous semiconductors; silicon; titanium compounds; ALD TiN; C; CVD carbon coatings; Internet of Things; Si; TiN; atomic layer deposition; chemical vapor deposition; electrochemical capacitors; electrolyte; energy harvesting; integrated on-chip energy storage; porous Si nanostructures; silicon processing methods; Capacitance; Capacitors; Coatings; Nanostructures; Silicon; Surface treatment; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
Type :
conf
DOI :
10.1109/IEDM.2014.7047009
Filename :
7047009
Link To Document :
بازگشت