Title :
Jot devices and the Quanta Image Sensor
Author :
Jiaju Ma ; Hondongwa, Donald ; Fossum, Eric R.
Author_Institution :
Thayer Sch. of Eng. at Dartmouth, Dartmouth Coll., Hanover, NH, USA
Abstract :
The Quanta Image Sensor (QIS) concept and recent work on its associated jot device are discussed. A bipolar jot and a pump-gate jot are described. Both have been modelled in TCAD. As simulated, the pump-gate jot has a full well of 200e- and conversion gain of 480uV/e-.
Keywords :
CMOS image sensors; technology CAD (electronics); CIS pixel; CMOS image sensor pixel; QIS concept; TCAD; bipolar jot devices; conversion gain; pump-gate jot; quanta image sensor; CMOS image sensors; Capacitance; Electric potential; Logic gates; Signal to noise ratio;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047021
