Title :
Wide temperature (10K–700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application
Author :
Kawarada, H. ; Yamada, T. ; Xu, D. ; Tsuboi, H. ; Saito, T. ; Hiraiwa, A.
Author_Institution :
Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan
Abstract :
By forming a highly stable Al2O3 gate oxide on a C-H bonded channel of diamond, high-temperature and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From -263°C (10K) to 400°C (673K), the variation of maximum drain-current is within 50% at a given gate bias. The maximum breakdown voltage (VB,max) of the MOSFET without a field plate is 996V at a gate-drain distance (LGD) of 9μm. We fabricated some MOSFETs satisfying VB,max/LGD > 200V/μm (2MV/cm). This value is superior to those of lateral SiC or GaN FETs.
Keywords :
bonding processes; diamond; power MOSFET; C; C-H diamond MOSFET; bonded channel; distance 9 mum; gate oxide; gate-drain distance; high-temperature high-voltage metal-oxide-semiconductor field-effect transistor; maximum breakdown voltage; maximum drain-current variation; power electronics application; temperature 10 K to 700 K; voltage 996 V; Aluminum oxide; Diamonds; Electric breakdown; Logic gates; MOSFET; Temperature;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047030
