Title :
Scaling breakthrough for analog/digital circuits by suppressing variability and low-frequency noise for FinFETs by amorphous metal gate technology
Author :
Matsukawa, Takashi ; Fukuda, Koichi ; Yongxun Liu ; Tsukada, Junichi ; Yamauchi, Hiromi ; Ishikawa, Yuki ; Endo, Kazuhiko ; O´uchi, Shin-ichi ; Migita, Shinji ; Mizubayashi, Wataru ; Morita, Yukinori ; Ota, Hiroyuki ; Masahara, Meishoku
Author_Institution :
Nanoelectron. Res. Inst., Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
Abstract :
The effectiveness of amorphous metal gate (MG) in suppressing low-frequency noise (LFN) for FinFETs has been thoroughly investigated. It was demonstrated that the amorphous TaSiN MGs with various atomic compositions provide flexible tuning of threshold voltage (Vt) as well as small Vt variability, namely AVt. It was found that the TaSiN-MG FinFETs exhibit drastic reduction of LFN in comparison to the poly-crystalline TiN MG case. Modelling by 3D-TCAD reveals that work function variation (WFV) of the MG has a significant impact on LFN generation. Suppression of AVt and LFN is highly beneficial to conduct further scaling of analog/digital components in SoC.
Keywords :
MOSFET; amorphous semiconductors; circuit noise; circuit tuning; mixed analogue-digital integrated circuits; scaling circuits; silicon compounds; system-on-chip; tantalum compounds; technology CAD (electronics); three-dimensional integrated circuits; titanium compounds; 3D-TCAD; FinFET; LFN generation reduction; TaSiN; TiN; WFV; amorphous metal gate technology; analog-digital circuit SoC; atomic compositions; flexible tuning; polycrystalline MG case; scaling breakthrough; threshold voltage; variability low-frequency noise suppression; work function variation; Correlation; Films; FinFETs; Fluctuations; Logic gates; Silicon; Tin;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047035
