Title :
High Ion/Ioff Ge-source ultrathin body strained-SOI tunnel FETs
Author :
Minsoo Kim ; Wakabayashi, Yuki ; Nakane, Ryosho ; Yokoyama, Masafumi ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Univ. of Tokyo, Tokyo, Japan
Abstract :
High performance operation of Ge-source/strained-Si-channel hetero-junction tunnel FETs is demonstrated. It is found that tensile strain in Si-channels can enhance the tunneling current because of the reduced effective energy bandgap, Eg.eff. Nitrogen heat-treatment can improve the gate-to-channel MIS interface which causes SS improvement. The fabricated Ge/sSOI(1.1 %) tunnel FETs show high Ion/Ioff ratio over 107 and steep minimum SS of 28 mV/dec. Back biasing effects are also investigated and the Ion and average SS are improved by positive back biasing.
Keywords :
MISFET; germanium; heat treatment; high electron mobility transistors; nitrogen; semiconductor device manufacture; semiconductor device testing; silicon-on-insulator; tunnel transistors; Ge-Si; back biasing effects; energy bandgap; gate-to-channel MIS interface; heterojunction tunnel FET; nitrogen heat treatment; silicon-on-insulator; tensile strain; tunneling current; ultrathin body strained-SOI tunnel FET; Junctions; Logic gates; Silicon; Strain; Temperature; Temperature measurement; Tunneling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047043
