Title :
A Schottky-barrier silicon FinFET with 6.0 mV/dec Subthreshold Slope over 5 decades of current
Author :
Jian Zhang ; De Marchi, Michele ; Gaillardon, Pierre-Emmanuel ; De Micheli, Giovanni
Author_Institution :
Integrated Syst. Lab., EPFL, Lausanne, Switzerland
Abstract :
In this paper, we demonstrate a steep Subthreshold Slope (SS) silicon FinFET with Schottky-barrier source/drain. The device shows a minimal SS of 3.4 mV/dec and an average SS of 6.0 mV/dec over 5 decades of current swing. Ultra-low leakage floor of 0.06 pA/μm is also achieved with high Ion/Ioff ratio of 107.
Keywords :
MOSFET; Schottky barriers; silicon; FinFET; SS; Schottky barrier source-drain; Si; current swing; steep subthreshold slope; ultralow leakage floor; FinFETs; Impact ionization; Logic gates; Schottky barriers; Silicon; Tunneling;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047045
