Title :
A new approach for trap analysis of vertical NAND flash cell using RTN characteristics
Author :
Daewoong Kang ; Changsub Lee ; Sunghoi Hur ; Duheon Song ; Jeong-Hyuk Choi
Author_Institution :
Flash Dev. Center, Samsung Electron. Co., Yongin, South Korea
Abstract :
We introduce new phenomena that show turn-on at back-side for Vertical NAND (V-NAND) with back-insulator and propose a new method to analyze the trap of back-interface related to the phenomena. Back-side traps have been analyzed with the back-gate structure [1]. However, V-NAND has no back-gate structure, so it´s difficult to observe traps. With RTN method we proposed, it´s possible for us to observe back-side traps.
Keywords :
NAND circuits; flash memories; integrated circuit modelling; noise measurement; RTN characteristics; RTN method; V-NAND; back-gate structure; back-insulator; back-interface; back-side traps; random telegraph noise; trap analysis; vertical NAND flash cell; Charge pumps; Correlation; Current measurement; Electron traps; Insulators; Logic gates; Voltage measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047052
