Title :
Through silicon via (TSV) effects on devices in close proximity - the role of mobile ion penetration - characterization and mitigation
Author :
Kothandaraman, C. ; Cohen, S. ; Parks, C. ; Golz, J. ; Tunga, K. ; Rosenblatt, S. ; Safran, J. ; Collins, C. ; Landers, W. ; Oakley, J. ; Liu, J. ; Martin, A.J. ; Petrarca, K. ; Farooq, M. ; Graves-Abe, T.L. ; Robson, N. ; Iyer, S.S.
Author_Institution :
Semicond. R&D Center, IBM Microelectron., Hopewell Junction, NY, USA
Abstract :
A new interaction between TSV processes and devices in close proximity, different from mechanical stress, is identified, studied and mitigated. Detailed characterization via Triangular Voltage Sweep (TVS) and SIMS shows the role of mobile ion penetration from BEOL layers. An improved process is presented and confirmed in test structures and DRAM.
Keywords :
electrostatics; ion mobility; three-dimensional integrated circuits; BEOL layers; DRAM; SIMS; TSV processes; TVS characterisation; mechanical stress; mobile ion penetration; through silicon via; triangular voltage sweep; Ions; Mobile communication; Random access memory; Silicon; Stress; Three-dimensional displays; Through-silicon vias;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047053
