Author :
Man Ho Kwan ; Wong, K.-Y. ; Lin, Y.S. ; Yao, F.W. ; Tsai, M.W. ; Chang, Y.-C. ; Chen, P.C. ; Su, R.Y. ; Wu, C.-H. ; Yu, J.L. ; Yang, F.J. ; Lansbergen, G.P. ; Wu, H.-Y. ; Lin, M.-C. ; Wu, C.B. ; Lai, Y.-A. ; Hsiung, C.-W. ; Liu, P.-C. ; Chiu, H.-C. ; Chen
Author_Institution :
Analog / RF & Specialty Technol. Div., TSMC, Hsinchu, Taiwan
Abstract :
CMOS-compatible 100/650 V enhancement-mode FETs and 650 V depletion-mode MISFETs are fabricated on 6-inch AlGaN/GaN-on-Si wafers. They show high breakdown voltage and low specific on-resistance with good wafer uniformity. The importance of epitaxial quality is figured out in a key industrial item: high-temperature-reverse-bias-stress-induced on-state drain curent degradation. Optimization of epitaxial layers shows significant improvement of device reliability.
Keywords :
CMOS integrated circuits; III-V semiconductors; MISFET; aluminium compounds; epitaxial layers; gallium compounds; integrated circuit reliability; silicon; wide band gap semiconductors; AlGaN; CMOS-compatible enhancement-mode FET; GaN; GaN-on-Si field-effect transistor; Si; breakdown voltage; depletion-mode MISFET; device reliability; epitaxial layer quality; high voltage power application; high-temperature-reverse-bias-stress-induced on-state drain current degradation; specific on-resistance; voltage 650 V; wafer uniformity; Aluminum gallium nitride; Degradation; Gallium nitride; HEMTs; Logic gates; Reliability; Stress;
