A new saw-like self-recovery of interface states in nitride-based memory cell

Author

Yuh-Te Sung ; Po-Yen Lin ; Jim Chen ; Tzong-Sheng Chang ; Ya-Chin King ; Chrong Jung Lin

Author_Institution

Inst. of Electron. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2014

Abstract

A new saw-like self-recovery Self-Aligned Nitride (SAN) memory cell is proposed and fabricated in 28nm high-k metal gate (HKMG) CMOS process for high-density logic NVM applications. The cell is operated with Source-Side Injection (SSI) for programming and band-to-band hot holes (BBHH) for erasing. Two effective self-heating recovery mechanisms are proposed and performed to maintain a stable On/Off read window after cycling stresses. Besides, the characteristic and reliability comparison of the SAN cell in other technology nodes, 90nm/45nm/32nm, are characterized to further verify the saw-like self-detrapping and self-recovery operation. The new 28nm HKMG SAN memory cell with the self-detrapping recovery results excellent and superior endurance performance and can provide a very promising solution for logic NVM in advanced technologies.

Keywords

CMOS memory circuits; integrated circuit manufacture; integrated memory circuits; band-to-band hot holes; high-density logic NVM; high-k metal gate CMOS process; interface states; saw-like self-recovery; self-aligned nitride memory cell; self-detrapping recovery; size 28 nm; size 32 nm; size 45 nm; size 90 nm; source-side injection; CMOS integrated circuits; CMOS technology; Logic gates; Metals; Nonvolatile memory; Storage area networks; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047084

Filename

7047084