Title :
Low-frequency noise and RTN on near-ballistic III–V GAA nanowire MOSFETs
Author :
Conrad, N. ; Si, M. ; Shin, S.H. ; Gu, J.J. ; Zhang, J. ; Alam, M.A. ; Ye, P.D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
In this work, we report the first observation of RTN in highly scaled InGaAs GAA MOSFETs fabricated by a top-down approach. RTN and low frequency noise were systematically studied for devices with various gate dielectrics, channel lengths and nanowire diameters. Mobility fluctuation is confirmed to be the source of low-frequency noise, showing 1/f characteristics. Low-frequency noise was found to decrease as the channel length scaled down from 80 nm to 20 nm, indicating the near-ballistic transport in highly scaled InGaAs GAA MOSFET.
Keywords :
1/f noise; III-V semiconductors; MOSFET; arsenic alloys; gallium alloys; gallium arsenide; indium alloys; nanowires; 1/f characteristic; InGaAs; RTN; channel length; gate dielectric; gate-all-around; low-frequency noise; metal oxide semiconductor field effect transistor; mobility fluctuation; near-ballistic III-V GAA nanowire MOSFET; random telegraph noise; top-down approach; Aluminum oxide; Fluctuations; Indium gallium arsenide; Logic gates; Low-frequency noise; MOSFET;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047086
