Title :
Gated and STI defined ESD diodes in advanced bulk FinFET technologies
Author :
Chen, S.-H. ; Linten, D. ; Lee, J.-W. ; Scholz, M. ; Hellings, G. ; Sibaja-Hernandez, A. ; Boschke, R. ; Song, M.-H. ; See, Y. ; Groeseneken, Guido ; Thean, A.
Author_Institution :
imec, Leuven, Belgium
Abstract :
In CMOS scaling roadmap, bulk FinFET is the mainstream technology for sub-20nm nodes. However, newly introduced process options in advanced bulk FinFET technologies can result in significant impacts on intrinsic ESD performance. In this work, two types of ESD protection diodes are studied and the corresponding TCAD simulations bring an in-depth understanding on the failure mechanism of these ESD diodes.
Keywords :
CMOS integrated circuits; MOSFET; electrostatic discharge; semiconductor diodes; technology CAD (electronics); CMOS scaling roadmap; ESD protection diodes; STI defined ESD diodes; TCAD simulations; bulk FinFET technology; failure mechanism; intrinsic ESD performance; Anodes; Cathodes; Electrostatic discharges; FinFETs; Layout; Logic gates; Silicides;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047089
