Title :
Reliability challenges for the 10nm node and beyond
Author :
Stathis, James H. ; Wang, M. ; Southwick, R.G. ; Wu, E.Y. ; Linder, B.P. ; Liniger, E.G. ; Bonilla, G. ; Kothari, H.
Author_Institution :
IBM Res., Yorktown Heights, NY, USA
Abstract :
Technology elements for the 10nm node and beyond include FINFETs on bulk or SOI, replacement gate process, multi-workfunction gate stacks, self-aligned contacts, and alternative channel materials. This paper describes current trends and how improved physics understanding and models can enable us to anticipate the effects of scaling on reliability even in early stages of development.
Keywords :
MOSFET; semiconductor device models; semiconductor device reliability; FINFET-on-SOI; FINFET-on-bulk; channel material; improved physics; multiworkfunction gate stacks; reliability challenge; replacement gate process; self-aligned contacts; size 10 nm; Degradation; Electric breakdown; Human computer interaction; Logic gates; Materials; Metals; Reliability;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047091
