Title :
Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction
Author :
Xiuyan Li ; Yajima, Takeaki ; Nishimura, Tomonori ; Nagashio, Kosuke ; Toriumi, Akira
Author_Institution :
Dept. of Mater. Eng., Univ. of Tokyo, Tokyo, Japan
Abstract :
The scavenging kinetics of ultra-thin-SiO2 interface layer (IL) in HfO2/SiO2/Si stacks is investigated by focusing on SiO2/Si interface reaction in addition to both O and Si atom kinetics. SiO2/Si interface serves as a stage that the oxygen vacancy (VO) is converted to Si release from SiO2 with the help of Si substrate. Based on both diffusion kinetics and possible reaction, an analytical model for two-stage SiO2-IL scavenging in high-k gate stack is proposed.
Keywords :
hafnium compounds; high-k dielectric thin films; reaction kinetics; silicon compounds; surface diffusion; vacancies (crystal); HfO2-SiO2-Si stacks; HfO2-SiO2-Si; SiO2-Si interface reaction; diffusion kinetics; high-k gate stack; oxygen vacancy; scavenging kinetics; two-stage SiO2-IL scavenging; ultra-thin-SiO2 interface layer; Hafnium oxide; Kinetic theory; Mathematical model; Silicon; Silicon carbide; Substrates;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047094
