Title :
First principles study of SiC/SiO2 interfaces towards future power devices
Author :
Shiraishi, K. ; Chokawa, K. ; Shirakawa, H. ; Endo, K. ; Araidai, M. ; Kamiya, K. ; Watanabe, H.
Author_Institution :
Grad. Sch. of Eng., Nagoya Univ., Nagoya, Japan
Abstract :
We clarify the intrinsic problems of SiC/SiO2 interfaces by the first principles calculations. The unique nearly free electron like characteristics of SiC conduction band bottom causes unexpected formation of interface states near the conduction band bottoms by process induced strain. These results indicate that strain free process is necessary for fabricating high quality NMOSFET. Another proposal is developing PMOSFET instead of presently popular NMOSFET. Moreover, we also discuss the Vth instability caused by proton diffusion.
Keywords :
MOSFET; ab initio calculations; conduction bands; interface states; silicon compounds; wide band gap semiconductors; NMOSFET; PMOSFET; SiC conduction band; SiC-SiO2; Vth instability; first principles study; free electron like characteristics; future power devices; interface states; intrinsic problems; proton diffusion; strain free process; Interface states; MOSFET circuits; Photonic band gap; Shape; Silicon; Silicon carbide; Strain;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047095
