Optimizing the close-to-carrier phase noise of monolithic CMOS-MEMS oscillators using bias-dependent nonlinearity

Author

Ming-Huang Li ; Chao-Yu Chen ; Chi-Hang Chin ; Cheng-Syun Li ; Sheng-Shian Li

Author_Institution

Inst. of NanoEngineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan

fYear

2014

Abstract

A fully monolithic 1.12-MHz CMOS-MEMS nonlinear oscillator comprising a double-ended tuning fork (DETF) resonator and a transimpedance sustaining amplifier has been proposed to enable significant close-to-carrier phase noise (PN) reduction while maximizing its output power for far-from-carrier phase noise improvement. The best-case PN of -77 dBc/Hz at 10-Hz offset, -97 dBc/Hz at 100-Hz offset, and -113 dBc/Hz at 1-kHz offset is realized in a monolithic CMOS-MEMS flexural-mode resonator oscillator for the first time, which is on par with bulk-mode MEMS oscillators using resonator Q > 100,000.

Keywords

CMOS integrated circuits; circuit optimisation; micromechanical devices; oscillators; phase noise; DETF resonator; bias-dependent nonlinearity; bulk-mode MEMS oscillators; close-to-carrier phase noise reduction; double-ended tuning fork; far-from-carrier phase noise; flexural-mode resonator oscillator; frequency 1.12 MHz; monolithic CMOS-MEMS oscillators; nonlinear oscillator; optimization; transimpedance sustaining amplifier; Micromechanical devices; Optical resonators; Phase noise; Resonant frequency; Vibrations;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047100

Filename

7047100