High performance polysilicon nanowire NEMS for CMOS embedded nanosensors

Author

Ouerghi, I. ; Philippe, J. ; Duraffourg, L. ; Laurent, L. ; Testini, A. ; Benedetto, K. ; Charvet, A.M. ; Delaye, V. ; Masarotto, L. ; Scheiblin, P. ; Reita, C. ; Yckache, K. ; Ladner, C. ; Ludurczak, W. ; Ernst, T.

Author_Institution

LETI, Univ. Grenoble Alpes, Grenoble, France

fYear

2014

Abstract

We present for the first time sub-100nm poly-Silicon nanowire (poly-Si NW) based NEMS resonators for low cost cointegrated mass sensors on CMOS featuring excellent performance when compared to crystalline silicon. In particular, comparable quality factors (130 in the air, 3900 in vacuum) and frequency stabilities are demonstrated. The minimum measured Allan deviation of 7×10^-7 leads to a mass resolution detection down to 100 zg (100×10^-21 g). Moreover a novel method for in-line NW gauges factor (GF) extraction is proposed and used.

Keywords

CMOS integrated circuits; nanosensors; nanowires; resonators; silicon; Allan deviation; CMOS embedded nanosensors; NEMS resonators; NW gauges factor extraction; Si; cointegrated mass sensors; crystalline silicon; frequency stability; mass resolution detection; polysilicon nanowire NEMS; quality factors; CMOS integrated circuits; Doping; Frequency measurement; Nanoelectromechanical systems; Piezoresistance; Resonant frequency; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047101

Filename

7047101