Title :
High-performance III–V devices for future logic applications
Author :
Kim, D.-H. ; Kim, T.-W. ; Baek, Rh ; Kirsch, P.D. ; Maszara, W. ; del Alamo, J.A. ; Antoniadis, D.A. ; Urteaga, M. ; Brar, B. ; Kwon, Hm ; Shin, C.-S. ; Park, W.-K. ; Cho, Y.-D. ; Shin, Sh. ; Ko, Dh ; Seo, K.-S.
Author_Institution :
SEMATECH, Albany, OR, USA
Abstract :
High-mobility III-V transistors are poised to take the lead on future high performance logic operation. If this happens, indium-rich InxGa1-xAs is the most promising n-channel material. Indeed, remarkable progress has been made, including III-V gate-stacks with ALD-grown gate dielectrics. This paper reviews the evolution of high-performance III-V devices for future logic applications and discuss a possible path forward to further improve their logic figure-of-merits.
Keywords :
CMOS logic circuits; III-V semiconductors; gallium arsenide; indium compounds; logic devices; ALD-grown gate dielectrics; III-V devices; III-V gate-stacks; InxGa1-xAs; high-mobility III-V transistors; logic applications; logic figure-of-merits; logic operation; n-channel material; HEMTs; Hafnium oxide; Indium gallium arsenide; Logic gates; MODFETs; MOSFET; Silicon;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047105
