Solution-processed poly-Si TFTs fabricated at a maximum temperature of 150°C

Author

Trifunovic, M. ; Zhang, J. ; van der Zwan, M. ; Ishihara, R.

Author_Institution

Delft Inst. of Microsyst. & Nanoelectron. Technol. (DIMES), Delft Univ. of Technol., Delft, Netherlands

fYear

2014

Abstract

Printing liquid silicon devices using cyclopentasilane as the precursor have led to solution processed devices with high mobilities. The fabrication process, however, required a relatively high process temperature of 350°C, incompatible to inexpensive plastics. A novel processing method is presented that decreases the maximum processing temperature of poly-Si TFTs to 150°C, compatible to low-cost plastics and paper, by using a XeCl excimer laser treatment that would directly transform a solution with polysilane chains into solid polycrystalline silicon. Mobilities as high as 23.5 and 21.0cm²/Vs were obtained for the PMOS and NMOS devices respectively.

Keywords

elemental semiconductors; excimer lasers; silicon; thin film transistors; NMOS devices; PMOS devices; Si; XeCl; XeCl excimer laser treatment; cyclopentasilane; fabrication process; liquid silicon device printing; low-cost papers; low-cost plastics; maximum processing temperature; polysilane chains; relatively high-process temperature; solid polycrystalline silicon; solution-processed polysilicon TFT; temperature 150 degC; temperature 350 degC; Fabrication; Films; Lasers; MOS devices; Silicon; Substrates; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047114

Filename

7047114