• DocumentCode
    3565192
  • Title

    High performance ultra-thin body (2.4nm) poly-Si junctionless thin film transistors with a trench structure

  • Author

    Mu-Shih Yeh ; Yung-Chun Wu ; Min-Hsin Wu ; Yi-Ruei Jhan ; Ming-Hsien Chung ; Min-Feng Hung

  • Author_Institution
    Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2014
  • Abstract
    The novel trench junctionless poly-Si thin-film transistor (trench JL-TFT) with ultra-thin body (2.4 nm) is utilized to simple dry etching process. This novel devices show excellent performance in terms of steep SS (99 mV/dec.) and high ION/IOFF (>107). The ION current of the ultra-thin body (UTB) JL-TFT is increased by quantum confined effect.
  • Keywords
    elemental semiconductors; etching; silicon; thin film transistors; Si; high performance ultrathin body; poly-Si junctionless thin film transistors; quantum confined effect; simple dry etching process; size 2.4 nm; trench JL-TFT; trench structure; Fabrication; Logic gates; Scanning electron microscopy; Silicon; Substrates; Temperature dependence; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047115
  • Filename
    7047115
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565192