DocumentCode
3565195
Title
High-precision wafer-level Cu-Cu bonding for 3DICs
Author
Okada, Masashi ; Sugaya, Isao ; Mitsuishi, Hajime ; Maeda, Hidehiro ; Shimoda, Toshimasa ; Izumi, Shigeto ; Nakahira, Hosei ; Okamoto, Kazuya
Author_Institution
Nikon Corp., Yokohama, Japan
fYear
2014
Abstract
A high-precision Cu-Cu bonding system for three-dimensional integrated circuits (3DICs) fabrication adopting a new precision alignment methodology is proposed. A new pressure profile control system is applied in the thermocompression bonding process. Experimental results show that the alignment capability is 250 nm or better, with similar overlay accuracy (|average| + 3σ) for permanent bonding. These developments are expected to contribute to the fabrication of future 3DICs.
Keywords
copper; lead bonding; three-dimensional integrated circuits; wafer bonding; 3DIC; Cu; high-precision wafer-level bonding; precision alignment methodology; pressure profile control system; thermocompression bonding process; three-dimensional integrated circuits; Accuracy; Bonding; CMOS integrated circuits; Metals; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047118
Filename
7047118
Link To Document