DocumentCode :
3565203
Title :
Flexible high-performance nonvolatile memory by transferring GAA silicon nanowire SONOS onto a plastic substrate
Author :
Ji-Min Choi ; Jin-Woo Han ; Yang-Kyu Choi
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
fYear :
2014
Abstract :
Flexible nonvolatile memory is demonstrated with excellent memory properties comparable to the traditional wafer-based rigid type of memory. This achievement is realized through the transfer of an ultrathin film consisting of single crystalline silicon nanowire (SiNW) gate-all-around (GAA) SONOS memory devices onto a plastic substrate from a host silicon wafer.
Keywords :
field effect memory circuits; flexible electronics; nanowires; plastics; random-access storage; silicon; GAA silicon nanowire SONOS; Si; flexible nonvolatile memory; gate-all-around SONOS memory; high performance nonvolatile memory; plastic substrate; single crystalline silicon nanowire; ultrathin film; Films; Logic gates; Nonvolatile memory; Plastics; SONOS devices; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
Type :
conf
DOI :
10.1109/IEDM.2014.7047122
Filename :
7047122
Link To Document :
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