• DocumentCode
    3565220
  • Title

    Nonlinear scattering function modeling based on harmonic balance method

  • Author

    Feng, Ni ; Wang, Jiali ; Lu, Sun

  • Author_Institution
    Dept. of Meas. Control Eng. & Instrum., Xidian Univ., Xi´´an
  • Volume
    1
  • fYear
    2008
  • Firstpage
    257
  • Lastpage
    260
  • Abstract
    The classic modeling method based on s-parameter measurement cannot describe the nonlinear characteristic of the components accurately. Nonlinear scattering function model can describe the nonlinear characteristic from the perspective of qualitative and quantitative. In this paper, a new concept of nonlinear scattering function is presented. Based on harmonic balance analysis, nonlinear scattering function model for microwave power components is extracted. The analysis of a power MESFET is used here as a vehicle to illustrate the concept of nonlinear scattering function and the new modeling method.
  • Keywords
    S-parameters; Schottky gate field effect transistors; harmonic analysis; harmonic balance method; nonlinear scattering function modeling; power MESFET; s-parameter measurement; Circuits; Frequency domain analysis; Harmonic analysis; MESFETs; Microwave technology; Power system harmonics; Radar scattering; Scattering parameters; Vehicles; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter Wave Technology, 2008. ICMMT 2008. International Conference on
  • Print_ISBN
    978-1-4244-1879-4
  • Electronic_ISBN
    978-1-4244-1880-0
  • Type

    conf

  • DOI
    10.1109/ICMMT.2008.4540355
  • Filename
    4540355