Title :
55-µA GexTe1−x/Sb2Te3 superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures
Author :
Takaura, N. ; Ohyanagi, T. ; Tai, M. ; Kinoshita, M. ; Akita, K. ; Morikawa, T. ; Shirakawa, H. ; Araidai, M. ; Shiraishi, K. ; Saito, Y. ; Tominaga, J.
Author_Institution :
Low-power Electron. Assoc. & Project, Tsukuba, Japan
Abstract :
GexTe1-x/Sb2Te3 superlattice topological-switching random access memory (TRAM) was developed. Set and reset currents of 55 μA, the lowest for an ULSI-grade device, were obtained. TEM analyses of the Ge-Te structures and novel superlattice fabrication enabled us to reveal the retention, endurance, and electrical characteristics of TRAM for the first time.
Keywords :
ULSI; antimony compounds; germanium compounds; integrated circuit testing; network topology; random-access storage; superlattices; switching circuits; transmission electron microscopy; Ge-Te; GexTe1-x-Sb2Te3; TEM analyses; TRAM; ULSI-grade device; atomic arrangement; current 55 muA; reset currents; superlattice fabrication; superlattice topological-switching random access memory; transmission electron microscopy; Atomic layer deposition; Electrodes; Films; Phase change random access memory; Resistance; Superlattices; Switches;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047132
