DocumentCode
3565236
Title
Circuit-level benchmarking of access devices for resistive nonvolatile memory arrays
Author
Narayanan, P. ; Burr, G.W. ; Shenoy, R.S. ; Virwani, K. ; Kurdi, B.
Author_Institution
IBM Res. - Almaden, San Jose, CA, USA
fYear
2014
Abstract
Access Devices (1AD) for crossbar resistive (1R) memories are compared via circuit-level analysis. We show that in addition to intrinsic properties, AD suitability for 1AD+1R memories is strongly dependent upon (a) nonvolatile memory (NVM) and (b) circuit parameters. We find that (1) building large arrays (≥1Mb) with ≥10uA NVM current would require MIEC ADs and moderate NVM switching voltage (≤1.2V). (2) For all ADs high NVM voltages (>2V) are supported only at sub-5uA currents. AD improvements to expand this design space are discussed.
Keywords
integrated circuit design; resistive RAM; 1AD; 1R memories; AD suitability; MIEC AD; NVM current; NVM switching voltage; access devices; circuit parameters; circuit-level analysis; circuit-level benchmarking; crossbar resistive memories; design space; intrinsic properties; resistive nonvolatile memory arrays; Integrated circuit modeling; Nonvolatile memory; Power demand; Resistance; Switches; Threshold voltage; Varistors; 1AD1R; Access Device; Nonvolatile memory; Selector;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2014 IEEE International
Type
conf
DOI
10.1109/IEDM.2014.7047137
Filename
7047137
Link To Document