Source-induced RDF overwhelms RTN in nanowire transistor: Statistical analysis with full device EMC/MD simulation accelerated by GPU computing

Author

Suzuki, Akito ; Kamioka, Takefumi ; Kamakura, Yoshinari ; Ohmori, Kenji ; Yamada, Keisaku ; Watanabe, Takanobu

Author_Institution

Fac. of Sci. & Eng., Waseda Univ., Tokyo, Japan

fYear

2014

Abstract

We numerically demonstrate that a random dopant fluctuation (RDF) in a source region causes a noticeable variability in the on-current of Si nanowire (NW) transistors, and its effect is much larger than that of a random telegraph noise (RTN). This work assesses the static and dynamic variability of NW device characteristics using the ensemble Monte Carlo/molecular dynamics (EMC/MD) simulation, which employs parallel computing technique using a graphic processing unit (GPU). The current flow in a one-dimensional NW device is determined by the number of dopants at the source edge, indicating the importance of forming an abrupt source-channel boundary to suppress the variability.

Keywords

Monte Carlo methods; field effect transistors; graphics processing units; molecular dynamics method; nanowires; random noise; semiconductor device models; silicon; statistical analysis; EMC/MD simulation; GPU computing; NW device characteristic; RTN; Si; dynamic variability; ensemble Monte Carlo/molecular dynamics simulation; graphic processing unit; nanowire transistor; parallel computing technique; random dopant fluctuation; random telegraph noise; source-channel boundary; source-induced RDF; static variability; statistical analysis; variability suppression; Computational modeling; Electromagnetic compatibility; Graphics processing units; Impurities; Logic gates; Resource description framework; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047139

Filename

7047139