Title :
Evolution of directed ion beams from doping to materials engineering
Author_Institution :
Appl. Mater., Varian Semicond. Equip., Gloucester, MA, USA
Abstract :
We review recent changes to implanter processing capabilities, including the adoption of cryogenic implants to reduce leakage and contact resistance as well as high temperature implants for finFETs. We discuss some specific 3D challenges and introduce a new process technology for 3D that uses directed ion beams for material modification including implant, etch and deposition.
Keywords :
MOSFET; etching; ion beams; ion implantation; semiconductor doping; contact resistance reduction; cryogenic implant; deposition; directed ion beam evolution; doping; etching; finFET; implanter processing; leakage resistance reduction; material modification engineering; temperature implant reduction; Cryogenics; Doping; Implants; Ion beams; Materials; Plasma temperature; Three-dimensional displays;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047157
