• DocumentCode
    3565281
  • Title

    NBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction

  • Author

    Ma, J. ; Zhang, W. ; Zhang, J.F. ; Benbakhti, B. ; Ji, Z. ; Mitard, J. ; Franco, J. ; Kaczer, B. ; Groeseneken, G.

  • Author_Institution
    Sch. of Eng., Liverpool John Moores Univ., Liverpool, UK
  • fYear
    2014
  • Abstract
    Conventional lifetime prediction method developed for Si is inapplicable to Ge devices. This work demonstrates that the defects are different in Ge and Si devices. Based on the investigation of defect difference, for the first time, a method is developed for Ge devices to restore the power law for NBTI kinetics, enabling lifetime prediction. This method is applicable for both GeO2/Ge and Sicap/Ge devices, assisting in further Ge process/device optimization.
  • Keywords
    MOSFET; elemental semiconductors; germanium; negative bias temperature instability; semiconductor device reliability; Ge devices; Ge-GeO2; NBTI kinetics; Si devices; device optimization; lifetime prediction method; pMOSFET; power law; Aluminum oxide; Energy states; Kinetic theory; MOSFET; Reliability; Silicon; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2014 IEEE International
  • Type

    conf

  • DOI
    10.1109/IEDM.2014.7047166
  • Filename
    7047166
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3565281