New understanding of state-loss in complex RTN: Statistical experimental study, trap interaction models, and impact on circuits

Author

Jibin Zou ; Runsheng Wang ; Shaofeng Guo ; Mulong Luo ; Zhuoqing Yu ; Xiaobo Jiang ; Pengpeng Ren ; Jianping Wang ; Jinhua Liu ; Jingang Wu ; Waisum Wong ; Shaofeng Yu ; Hanming Wu ; Shiuh-Wuu Lee ; Yangyuan Wang ; Ru Huang

Author_Institution

Key Lab. of Microelectron. Devices & Circuits (MOE), Peking Univ., Beijing, China

fYear

2014

Abstract

In this paper, the statistical characteristics of complex RTN (both DC and AC) are experimentally studied for the first time, rather than limited case-by-case studies. It is found that, over 50% of RTN-states predicted by conventional theory are lost in actual complex RTN statistics. Based on the mechanisms of non-negligible trap interactions, new models are proposed, which successfully interpret this state-loss behavior, as well as the different complex RTN characteristics in SiON and high-κ devices. The circuit-level study also indicates that, predicting circuit stability would have large errors if not taking into account the trap interactions and RTN state-loss. The results are helpful for the robust circuit design against RTN.

Keywords

VLSI; random noise; circuit stability; complex RTN; random telegraph noise; robust circuit design; state-loss behavior; trap interaction models; Circuit stability; Correlation; Degradation; Digital circuits; Integrated circuit modeling; Microelectronics; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2014 IEEE International

Type

conf

DOI

10.1109/IEDM.2014.7047169

Filename

7047169