Title :
Experiment and model for deviation from Pelgrom scaling relation in device width
Author :
Ning Lu ; Brown, Jeffrey S. ; Thoma, Rainer ; Kotecha, Pooja M. ; Wachnik, Richard A.
Author_Institution :
IBM Semicond. R&D Center, Essex Junction, VT, USA
Abstract :
Through modeling, simulations, and experimental data, we show that FETs exhibit several width dependent characteristics purely due to un-correlated random variations among sub-threshold currents in different width segments. They include unit-width median sub-threshold current and constant-current threshold voltage. The width scaling relation for threshold voltage mismatch is different from Pelgrom scaling relation for sufficiently large variation when compared to the thermal voltage.
Keywords :
field effect transistors; random processes; semiconductor device models; FET; Pelgrom scaling relation; constant-current threshold voltage; thermal voltage; threshold voltage mismatch; uncorrelated random variation; unit-width median subthreshold current; width scaling relation; Data models; FinFETs; Leakage currents; Monte Carlo methods; Standards; Threshold voltage;
Conference_Titel :
Electron Devices Meeting (IEDM), 2014 IEEE International
DOI :
10.1109/IEDM.2014.7047174
