DocumentCode
3565763
Title
Next generation metallization technique for IC package application
Author
Hakiri, Yoshiyuki ; Yoshida, Katsuhiro ; Shenghua Li ; Kondoh, Makoto ; Hayashi, Shinjiro
Author_Institution
Dow Electron. Mater., Agano, Japan
fYear
2014
Firstpage
166
Lastpage
169
Abstract
IC package substrates are normally fabricated by semi-additive process (SAP) for high-density packaging. Dow´s brand new Ni-free electroless copper chemistry developed for SAP offers new solutions for the future fine pattern design to IC substrate production. The new developed chemistry shows high productivity (0.6um/20min) and peel strength (over 0.5kN/m on 100nm roughness) and improved micro via holes (MVH) uniform deposition with no Cu-Cu connection defects.
Keywords
adhesion; copper; electroless deposition; integrated circuit metallisation; integrated circuit packaging; vias; Cu-Cu; Dow free electroless chemistry; IC package substrate production application; MVH uniform deposition improvement; SAP fabrication; connection defects; fine pattern design; high productivity; high-density packaging; microvia holes uniform deposition improvement; next generation metallization technique; peel strength; semiadditive process fabrication; Additives; Copper; Dielectric materials; Etching; Films; Surface morphology;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2014 9th International
Type
conf
DOI
10.1109/IMPACT.2014.7048355
Filename
7048355
Link To Document