DocumentCode :
3565792
Title :
Advanced non-etching adhesion promoter for next generation IC packaging
Author :
Lager, M. ; Tews, D. ; Haidar, R. ; Hotz, S. ; Cho, W. ; Liong, A. ; Brooks, P.
Author_Institution :
Atotech Deutschland GmbH, Berlin, Germany
fYear :
2014
Firstpage :
220
Lastpage :
225
Abstract :
In this paper findings from the development of a new Non Etching Adhesion Promoter process (NEAP) targeting inner and outer layer bonding are discussed. The herein described approach propagates a nano-scale copper structure that forms a thin anchoring layer with increased surface area, but hardly contributes to the surface roughness. The superb adhesion results obtained to a wide range of dielectrics support the hypothesis of a mechanical type of adhesion mechanism. This paper also outlines detailed examinations on impacts of the adhesion promoter to subsequent processes revealing an unaffected performance generating conductors with excellent geometries for inner- and outerlayer application and clear benefits to the industry.
Keywords :
adhesion; bonding processes; etching; integrated circuit packaging; surface roughness; advanced nonetching adhesion promoter; inner layer bonding; nano-scale copper structure; next generation IC packaging; outer layer bonding; surface area; surface roughness; Adhesives; Copper; Rough surfaces; Surface morphology; Surface roughness; Surface topography; Surface treatment;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2014 9th International
Type :
conf
DOI :
10.1109/IMPACT.2014.7048372
Filename :
7048372
Link To Document :
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